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| PM52AUBW060 w w at .D w Sh a et e 4U om .c MITSUBISHI SEMICONDUCTOR PM52AUBW060 PM52AUBW060 FLAT-BASE TYPE FLAT-BASE TYPE INSULATED PACKAGE INSULATED PACKAGE OUTLINE AND RATING * A/F IPM Input Current Rating Ii: 100% load: 20A(rms) 125% load: 25A(rms), 1min. * Variable DC Output Voltage Control Function * With control function of output voltage repression under light load * With Function of Soft Start * Protection Functions * Output Voltage repression under light load ----------- OV1 * Output Over Voltage protection -------------------------- OV2 (OV2 > OV1) * Under Voltage lockout protection ------------------------ UV * Over Temperature protection ----------------------------- OT * Short circuit current protection --------------------------- SC APPLICATION AC100V/20A, 200V/20A input Power Factor Corrector, PAM contoroller for Air Conditioner and General purpose Condenser Input Type Invertor use. Fig.1 PACKAGE OUTLINES 731 571 2.54 2.54 2.54 5.08 5.08 5.08 45.720.5 (9.64) 21 20 21 19 18 2-4.5 w 1 w 1 w 16 17 2 15 t a .D 9-2.54 6 14 12 10 8 6 13 11 9 7 S a 53 e h 0.6 2.5 U t4 e .c m o 16-0.6 2-R5 50.4 5-2 3 4 5 5 1. P2 2. L 3. N2 4. P1 5. N1 6. GND 7. FO 8. Vsig 9. CAOUT 10. Vctrl 11. NC 2.5 12. TEST 13. ON/OFF 14. VD 15. NC 16. NC 17. NC 18. NC 19. NC 20. NC 21. Vo 19.5 24 16 (12.18) 10.16 10.16 10.16 10.16 0.6 4.10.5 40.640.5 650.5 1.5 53 1.5 3.5 Label w w w .D a aS t 80.5 1 161 ee h 4U t om .c Dec. 2002 MITSUBISHI SEMICONDUCTOR PM52AUBW060 FLAT-BASE TYPE INSULATED PACKAGE Fig.2 PM52AUBW060 INTERNAL FUNCTIONS BLOCK Noise Filter Vi R Ci Co' DB1 S L1 L Vo P2 + - Load Co N1 Rv Multiplx Output Voltage Negative Feedback IGBT OC Protection Output OV Protection Input Current Negative Feedback Drive Circuit Buffer for Vctrl N2 Vctrl CAOUT Vsig TEST VD VD=15V + - 10F ON/OFF F0 GND P1 Comparator Oscillator OT Control Power Supply UV Protection Open collector Control Circuit FAULT OUT A/F IPM Note 1: When applying 200V class input voltage, please use in-rush current blocking circuits S and R in order to prevent the AF IPM from being Damaged by the capacitor (Co)'s charge current when the power supply is turned on. Note 2: For EMI suppression, please connect noise filter and Ci. Note 3: For A/F IPM action, diode bridge (DB1) and DC reactor (L1) are necessary. Note 4: Due to high-speed switching, a surge voltage can be easily generated between P2 and N2. Because rectangular wave current that is switched by A/F IPM flows between P2-Co-N2, the area between P2-Co-N2 should be kept as small as possible (with short wiring.) Please use a high frequency electrolytic capacitor for the Co and connect it to a capacitor (Co') that is capable of handling high frequency such a as polypropylene film capacitor. Note 5: Please make sure to short-circuit between VO and P2 terminals because the VO terminal is output DC voltage negative feedback. When the VO terminal is opened, A/F IPM can be damaged. Note 6: Recommended circuit constant: L = 1mH, Ci = 3.3F, Co' = 3.3F, Co = 1000F Note 7: Selection of Rv: 7-1) When applying 100V input voltage, please use Rv = 0. 7-2) When applying 200V class input voltage, please use 270k. Dec. 2002 MITSUBISHI SEMICONDUCTOR PM52AUBW060 FLAT-BASE TYPE INSULATED PACKAGE MAXIMUM RATINGS (Tj = 25C, unless otherwise noted) MAIN CIRCUIT PART Symbol Vi Vi(surge) VO(surge) VCES VRRM Ii Supply Voltage Supply Voltage (surge) Output Voltage (surge) Collector-Emitter Voltage Repetitive Peak Reverse Voltage Input Current (100% Load) Parameter Conditions Applied Between: L-N1, P1-N1 Applied Between: L-N1, P1-N1, Surge value, Non-operating Applied Between: P2-N2, Surge value, Non-operating -- -- TC +90C, Vi = 100~200V, VO = 300V TC +90C, Vi = 100~200V, VO = 300V 1 min Non-repetitive Value for 1msec of Surge Current Vi = 100V Vi = 200V (Note 1) Ratings 255 500 500 600 600 20 25 120 2.0 4.0 -20 ~ +125 Unit Vrms V V V V Arms Arms A 2s kW kW C Ii(OVER LOAD) Input Current (125% Load) I2t -- -- Tj I2t for Fu sing Load Load Junction Temperature CONTROL PART Symbol VD Vsig VON/OFF Parameter Supply Voltage Control Voltage ON/OFF Signal Voltage Conditions Applied Between: VD-GND Applied Between: Vsig-GND Applied Between: ON/OFF-GND Ratings 20 0 ~ VD 0 ~ VD Unit V V V TOTAL SYSTEM Symbol VO TC Tstg Viso Output Voltage Module Case Operating Temperature Storage Temperature Isolation Voltage Parameter (Note 2) (Note 3) 60Hz, Sinusoidal Charged part to Base, AC 1 min. Conditions Ratings 370 -20 ~ +100 -40 ~ +125 2500 Unit V C Vrms Note 1: The item defines the maximum junction temperature for the power elements (IGBT/Diode) of the A/F IPM to ensure safe operation. However, these power elements can endure junction temperature as high as 150C if it is a short time. A/F IPM can use virtual junction temperature to 150C if less than accumulation time 100hr. Note 2: Peak value of output voltage VO (it has instantaneous value) is less than rated value (370V), including in the case that output voltage is overshooting. Note 3: TC measurement point: 3mm deep at the center of the side of the base plate. Fig.3 Case Temperature (Tc) Measurement Point Tc Dec. 2002 MITSUBISHI SEMICONDUCTOR PM52AUBW060 FLAT-BASE TYPE INSULATED PACKAGE ELECTRICAL CHARACTERISTICS (Tj = 25C, VD = 15V, L1 = 1mH, Co = 1mF unless otherwise noted) MAIN CIRCUIT PART Symbol tc(on) tc(off) trr VCE(sat) VF ICES IRRM Irr Switching Time Collector-Emitter Saturation Voltage FWDi Forward Voltage Collector-Emitter Cutoff Current Repetitive Peak Reverse Current Reverse Recovery Current VCE = 300V, ICE = 30A, Tj = 125C ICE = 50A IF = 50A VCE = 600V VRRM = 600V VCE = 300V, ICE = 30A Parameter Test Conditions Min. -- -- -- -- -- -- -- -- Limits Typ. 0.07 0.25 0.07 1.8 2.0 -- -- 45 Max. -- -- -- 2.4 3.0 1.0 1.0 -- Unit s V V mA mA A CONTROL PART Symbol VD ID ID Vth(ON) Vth(OFF) fSW UV UVr Ictrl OV1 OV1r OV2 SC OT OTr IFOH VFOL tFO Note 4: Note 5: Note 6: Note 7: Note 8: Parameter Supply Voltage Circuit Current (Active) Circuit Current (Non-active) Input On Threshold Voltage Input Off Threshold Voltage Switching Frequency Supply Circuit Under Voltage Protection Vctrl Current Output Voltage Protection Over Voltage Protection Short Circuit Current Trip Level Oner Temperature Protection Fault Output Current Fault Output Voltage Fault Output Pulse Width Trip Level (Note 4) Reset Level (Note 4) VO = 300V, VD = 15V, Vctrl = 1.04V Trip Level (Note 5) Reset Level (Note 5) Trip Level (Note 6) Trip Level (Note 7) Trip Level (Note 8) Reset Level (Note 8) VD = 15V, VFO = 15V (Non-Operating) VD = 15V, IFOL = 10mA (Operating) VD = 15V (Operating) Test Conditions Applied between: VD-GND Min. 13.5 -- -- -- 1.9 18 11.5 12.0 -- VO+10 OV1-9 400 -- 100 -- -- -- 1.0 Limits Typ. 15 25 13 2.8 2.4 20 12.0 12.5 -0.31 VO+20 OV1-7 415 150 110 90 -- -- 1.8 Max. 16.5 30 -- 3.3 -- 22 12.5 13.0 -- VO+30 OV1-5 430 -- 120 -- 20 1.0 -- Unit V mA mA V V kHz V V mA V V V A C C A V ms Fault output is given when the internal UV protection (Auto-reset) Fault output is not given when the internal OV1 protection (Auto-reset) Fault output is given when the internal OV2 protection (Reset when ON/OFF (Terminal-11) is Low) Fault output is given when the internal SC protection (Reset when ON/OFF (Terminal-11) is Low) Fault output is given when the internal OT protection (Auto-reset) Dec. 2002 MITSUBISHI SEMICONDUCTOR PM52AUBW060 FLAT-BASE TYPE INSULATED PACKAGE TOTAL SYSTEM Symbol VO VO VO -- Parameter Output Voltage Adjust (1) Output Voltage Adjust (2) Output Voltage Adjust (3) Output Voltage Stability (1-1) (vs Input Voltage) Output Voltage Stability (1-2) -- (vs Input Voltage) Output Voltage Stability (2) (vs Load) Output Voltage Stability (3-1) (vs Ambient Temp.) Output Voltage Stability (3-2) (vs Ambient Temp.) Rise Time Over Shoot Voltage Power Factor Test Conditions Vi = 100V, LR = 400, Vsig = 1.38V Vi = 100V, LR = 400, Vsig = 2.08V Vi = 100V, LR = 400, Vsig = 3.26V VO = 300V, LR = 400 VO (Vi = 90V) - VO (Vi = 100V) VO (Vi = 100V) x100 (%) Limits Min. 351 291 191 -1 Typ. 360 300 200 -- Max. 369 309 209 +1 Unit V V V % VO = 300V, LR = 400 VO (Vi = 110V) - VO (Vi = 100V) VO (Vi = 100V) x100 (%) -1 -- +1 % Vi = 100V, VO = 300V VO (Load = 400) - VO (Load = 48) VO (Load = 400) x100 (%) -- 0 -- +6 % Vi = 100V, VO = 300V, LR = 400 VO (Ta = -20C) - VO (Ta = +25C) VO (Ta = +25C) x100 (%) -- -3 -- 0 % Vi = 100V, VO = 300V, LR = 400 VO (Ta = +100C) - VO (Ta = +25C) VO (Ta = +25C) x100 (%) -- -- -- cos 0 -- -- 0.99 -- -- -- 0.995 +3 100 30 1.0 % ms V -- Vi = 100V, VO = 300V, LR = 48 Vi = 100V, VO = 300V, LR = 400, L1 = 1mH Vi = 100V, VO = 300V, LR = 48 THERMAL RESISTANCE Symbol Rth(j-c)Q Rth(j-c)Di Rth(c-f) Parameter Junction to case Thermal Resistance Contact Thermal Resistance IGBT FWDi Case to fin, (per 1 module) Thermal grease applied Test Conditions Limits Min. -- -- -- Typ. -- -- -- Max. 0.94 1.15 0.09 Unit C/W MECHANICAL RATINGS AND CHARACTERISTICS Symbol -- -- Parameter Mounting torque Weight Test Conditions Mounting part screw: M3.5 -- Min. 0.78 -- Limits Typ. 0.98 50 Max. 1.18 -- Unit N*m g RECOMMENDED CONDITIONS FOR USE Symbol Vi VD Ii VO -- L Ci Co Co' Supply Voltage Supply Voltage Input Current Output Voltage Load Reactor Input Capacitor Output Capacitor Outrut Capacitor Parameter Test Conditions Applied Between: P1-N1 Applied Between: VD-GND Min. 90 13.5 -- 170 100 -- -- 1000 -- Limits Typ. -- 15 -- 300 -- 1 3.3 -- 3.3 Max. 255 16.5 20 350 2000 -- -- -- -- Unit Vrms V Arms V W mH F F F Vi = 100V, VO = 300V Dec. 2002 MITSUBISHI SEMICONDUCTOR PM52AUBW060 FLAT-BASE TYPE INSULATED PACKAGE Fig.4 CIRCUIT OF TERMINAL Vctrl P2 Vo VD PWM Vctrl A/F IPM Recommended Value 10F VAOUT Vsig - + GND Fig.5-1 AC INPUT VOLTAGE AND CONTROL SIGNAL TIMING CHART Power-OFF Power-ON AC Input Voltage Vi 0V Control Supply Voltage VD 0V ON ON/OFF OFF 4.5V Control Voltage Vsig 0V Please apply the POWER-ON/OFF signals as described in the above timing chart. And please apply to adjust the PAM control signal (Vsig) after turning on the ON/OFF switch. Fig.5-2 AC INPUT VOLTAGE AND CONTROL SIGNAL TIMING CHART (After Vsig set up, ON/OFF signal OFF (c) ON) Power-ON AC Input Voltage Vi 0V Control Supply Voltage VD 0V ON ON/OFF OFF 4.5V Control Voltage Vsig 0V Dec. 2002 MITSUBISHI SEMICONDUCTOR PM52AUBW060 FLAT-BASE TYPE INSULATED PACKAGE Fig.5-3 AC INPUT VOLTAGE AND CONTROL SIGNAL TIMING CHART (After Vi cut-off, ON/OFF signal ON (c) OFF) Power-OFF AC Input Voltage Vi 0V Control Supply Voltage VD 0V ON ON/OFF OFF 4.5V Control Voltage Vsig 0V In condition to use A/F IPM by external circuit connection of Fig.2, A/F IPM is not damaged in the sequence of Fig.5-3 as well. A/F IPM is not damaged in the sequence of Fig.5-2 and Fig.5-3, but give it when unavoidable. Please normally supply/cut-off the input power supply and input signals by the sequence of Fig.5-1. Fig.6 AC INPUT WAVEFORMS WITHOUT A/F IPM Fig.7 AC INPUT WAVEFORM WITH A/F IPM I V Dec. 2002 |
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